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Low Temperature · Piezoelectric Scanner16-z Motion Stage

• Compact design, dimensions: 16*16*9 mm
• Ultra-high vacuum & very low temperature compatible: 2 E-11 mbar & 30 mK
• Non-magnetic material Composed of pure Ti & BeCu, compatible with the 18 Tesla magnetic field
• High loads: 100 g
• Long travel range @300 K: 30*30 um
• Closed-loop control with position sensing up to 0.3 nm resolution
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“16 mm Series” — Scanner16-z (closed-loop)
Low Temperature · Piezoelectric Motion- Scanner Series
Low Temperature · Piezoelectric Scanner16-z Motion Stage
Features
• Compact design, dimensions: 16*16*9 mm
• Ultra-high vacuum & very low temperature compatible: 2 E-11 mbar & 30 mK
• Non-magnetic material Composed of pure Ti & BeCu, compatible with the 18 Tesla magnetic field
• High loads: 100 g
• Long travel range @300 K: 30*30 um
• Closed-loop control with position sensing up to 0.3 nm resolution
Dimension drawing

Scanner16-z, Specification
*All data below is measured with 50 ohm wires. Though there is no requirement on wires’ conductance, we recommend resistance below 50 ohm.

Optional Versions ⇨

.HV (default)

.ULT

.UHV

.ULT.UHV

 

.HV  version, default product;

.ULT version, used at He3 or dilution cryogenics systems

.UHV version, compatible  with 2E-11 mbar

1     Footprint × hight

16 × 16 mm × 9 mm

2    Weight

/

Working Environment &

 

3    Work environment

Temperature range: 1.4 ~ 400 K Vacuum: 2e-7 mbar

Max. Magnetic field: 18 Tesla

 

4    Option1 - 30 mK

 

 

 

5    Option2 - 2e-11 mbar

 

 

Materials

 

7    Mainbody

Pure Ti

BeCu

Pure Ti

BeCu

8    Wires

Phosphor Bronze Twisted Paired Wires, 20cm

9    Pin materials

Polyster (glass fiber filled), BeCu

Peek, BeCu

10   Pins number

2 pins for each axis

Motion

11   Scanning Axies

Z

 

12   Travel range @300 K

30 × 30 um

 

13   Drive voltage

Max. 120 V @300 K Max. 200 V @4 K

14   Max. Load

100 g

15   Capacitance @300 K

0.1 uF

Sensor (closed loop)

17   Sensor resolution

0.3 nm

18   Linearity error

Typical ~ 0.1 %

19   Repeatability

< 10 nm